| 123A, 1700V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER
MOSFET
DESCRIPTION
SiC The material can achieve high voltage with most carrier
devices (MOSFET) with fast device structure characteristics, so it
can realize the three characteristics of "high voltage", "low on
resistance" and "high frequency" at the same time.
It is widely used in electric vehicle charger, industrial equipment
power supply, efficient power regulator inverter and rectification part
and other uses.
FEATURES
* RDS(ON) ≤ 22 mΩ @ VGS=18V, ID=80A
* Wide bandgap SiC MOSFET technology
* High Speed Switching with Low Capacitances
* Easy to Parallel
* Low reverse recovery (Qrr)
* Power Factor Correction Modules
* Switch mode power supplies
* DC-AC Inverters
* On Board Charger
* High voltage DC/DC converters |
